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This study presents a novel approach for fabricating self-standing diamond films with tailorable cavities, eliminating the need for reactive ion etching (RIE). We employed selective area deposition on SiO2/Si substrates in a microwave plasma CVD system at high temperatures (1000°C). The method exploits the thermal expansion mismatch between diamond and SiO₂/Si substrates to induce film delamination, resulting in free-standing structures. Diamond films with thicknesses of approximately 50 μm were produced, featuring cavities whose dimensions could be controlled by lithography mask dimensions and deposition time. Raman spectroscopy confirmed the high quality of the diamond films, showing a dominant peak centered at 1330 cm-1. The presented technological approach offers a promising solution for microstructuring of diamond films with potential applications in high-tech applications.
Keywords: Diamond, chemical vapor deposition, SEM, self-standing, MEMS© This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.