from the conferences organized by TANGER Ltd.
Correlative microscopy methods have become significant due to the possibility of examining several material properties during one measurement. Atomic Force Microscopy in Scanning Electron Microscopy (AFM-in-SEM) is a correlative method that allows the simultaneous detection and acquisition of signals from both methods. Heterostructures of Graphene and hexagonal Boron Nitride (G/hBN) are studied with view to many electronic applications due to the possibility of tuning their electronic properties. In this work, we study electronic properties at the edges of single layer G on hBN flakes of various thicknesses prepared on Si and SiO2 substrates. Electronic properties are studied by AFM-in-SEM correlative microscopy that provides simultaneous acquisition of signals from both methods. Images of G/hBN heterostructure flakes obtained in the secondary electron detector show an enhanced signal along the edges that is attributed to localized electrons. We discuss how it corroborates a model that enhanced Raman signal of 2D and Si peaks on the G/hBN edges is electronic (plasmonic) rather than an optical or structural effect.
Keywords: AFM-in-SEM, correlative microscopy, graphene, boron nitride, electronic properties© This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.