from the conferences organized by TANGER Ltd.
We have performed an ab initio study of janus monolayers, a SiX state with as a direct wide bandgap semiconducting ferroelectric material, two-dimensional, 2D, silicon carbide has the potential to bring revolutionary advances into optoelectronic and electronic devices. It can overcome current limitations with silicon, bulk SiC, and gapless graphene. In addition to SiC, which is the most stable form of monolayer silicon carbide, other compositions, i.e., XC, are also predicted to be energetically favorable. Depending on the stoichiometry and bonding, monolayer SiC may behave as a semiconductor, semimetal or topological insulator. With different Si/C ratios, the emerging 2D silicon carbide materials could attain novel electronic, optical, magnetic, mechanical, and ferroelectric properties that go beyond those of graphene, silicene, and already discovered 2D semiconducting materials. This paper summarizes key findings in 2D SiX and provides insight into how changing the arrangement of silicon and carbon atoms in SiC will unlock incredible electronic, ferroelectric properties. It also highlights the significance of these properties for electronics, optoelectronics, and energy devices.
Keywords: Ferroelectric, Janus monolayer, quantum-mechanical, DFT© This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.