from the conferences organized by TANGER Ltd.
GaN-based nanostructures are used for many present semiconductor devices. The main topics are structures for blue LEDs and LDs, but there are also other interesting and important GaN devices namely for power electronics, scintillators and detectors as well as High Electron Mobility Transistors (HEMT). Several of our previous NANOCON contributions were devoted to the scintillator and detector structures; one was a description of optimization of HEMT structures and their growth parameters.
Keywords: GaN devices, HEMT, MOVPE epitaxy, dislocation© This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.