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Thin-film solid-state lithium-ion batteries can provide autonomous operation of miniature devices (biosensors, smartwatches, medical devices, etc.). In this work, we investigated the processes of obtaining thin films of manganese oxide by atomic layer deposition (ALD), and their electrochemical activity as an anode of a lithium-ion battery (LIBs). Tris (2,2,6,6-tetramethyl-3,5-heptanedionato) manganese (III) (Mn(thd)3) was used as an Mn precursor, and remote oxygen plasma was used as a co-reactant. Each pulse of Mn(thd)3 and remote plasma treatment were separated by N2 purge and evacuation of the reactor. The deposition of manganese oxide films was carried out on silicon (100) and stainless steel (316SS, 16 mm in diameter) substrates at the temperature of 250-300 °C. The effect of the precursor sublimation temperature, the pulse of manganese precursor, and purge time on the growth rate per cycle was studied. The average growth per cycle calculated from film thickness measurements (spectral ellipsometry) varied from 0.06 to 0.12 Å/cycle. Using X-ray photoelectron spectroscopy (XPS), the compositions of the deposited films were determined. According to XPS results, the formation of Mn2O3 oxide occurred during deposition. The change in the shape of the curves of cyclic voltammetry as a result of cyclic charge/discharge relative to lithium is discovered. The maximum capacity observed at 0.8 С-Rate (30 µA) was 110 µAh·µm-1·cm-2 for a steel substrate with a manganese oxide layer.
Keywords: Atomic layer deposition, manganese oxide, thin films, solid-state li-ion battery© This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.