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NANOSTRUCTURED LAYER ENHANCING LIGHT EXTRACTION FROM GAN-BASED SCINTILLATOR USING MOVPE

1,2 VANĚK Tomáš
Co-authors:
2 HUBÁČEK Tomáš 2 HÁJEK František 2 DOMINEC Filip 2 PANGRÁC Jiří 2 KULDOVÁ Karla 2 OSWALD Jiří 2 HOSPODKOVÁ Alice
Institutions:
1 Technical University of Liberec, Liberec, Czech Republic, EU, vanekt@fzu.cz
2 Institute of Physics CAS v.v.i., Prague, Czech Republic, EU
Conference:
12th International Conference on Nanomaterials - Research & Application, Brno, Czech Republic, EU, October 21 - 23, 2020
Proceedings:
Proceedings 12th International Conference on Nanomaterials - Research & Application
Pages:
12-17
ISBN:
978-80-87294-98-7
ISSN:
2694-930X
DOI:
https://doi.org/10.37904/nanocon.2020.3698
Published:
28th December 2020
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
1169 views / 527 downloads
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Abstract

Light extraction (LE) efficiency of GaN buffer layer was studied by angle-resolved photoluminescence. We measured enhancement of light extraction efficiency (LEE) up to 154% by introducing the SiNx layer atop the GaN buffer and subsequent GaN light extraction layer (LEL) overgrowth. Morphological properties of GaN "islands" forming the LEL, such as size and density, have been tuned by various growth parameters. Subsequently, the influence of different growth parameters, such as coalescence time, time of SiNx growth or type of nucleation carrier gas (H2 or N2), on LE was discussed. We also experimentally showed that LE of this layer is more efficient for higher extraction angles. Finally, we present the change in the GaN surface morphology by Si etching in H2 atmosphere during SiNx growth (measured by the atomic force microscopy).

Keywords: GaN, light extraction, SiNx, scintillator, MOVPE

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