from the conferences organized by TANGER Ltd.
In this study we present calculation of molecular mechanic and electronic transport properties of epitaxially grown graphene on step-shaped SiC substrate. We simulated two types of structural arrangements. The first structure, simulated mainly for purposes of comparisson, is planar SiC with graphene bilayer. The second structure is step-shaped SiC with graphene monolayer. We analyzed effects of hydrogenization of the SiC surface and conducted a series of calculations adressing shape of the resulting graphene layers. Finally, we calculated transmission spectrum and I/V curve of resulting structures.
Keywords: First principle simulation, SiC, graphene© This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.